2-58 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. http://www.intersil.com or 407-727-9207 | copyright ? intersil corporation 1999 formerly fss230r4 june 1998 jansr2N7400 8a, 200v, 0.440 ohm, rad hard, n-channel power mosfet features ? 8a, 200v, r ds(on) = 0.440 w ? total dose - meets pre-rad speci?cations to 100k rad (si) ? single event - safe operating area curve for single event effects - see immunity for let of 36mev/mg/cm 2 with v ds up to 80% of rated breakdown and v gs of 10v off-bias ? dose rate - typically survives 3e9 rad (si)/s at 80% bv dss - typically survives 2e12 if current limited to i dm ? photo current - 3.0na per-rad(si)/s typically ? neutron - maintain pre-rad speci?cations for 1e13 neutrons/cm 2 - usable to 1e14 neutrons/cm 2 die family ta17637. mil-prf-19500/632. description the discrete products operation of intersil corporation has developed a series of radiation hardened mosfets specif- ically designed for commercial and military space applica- tions. enhanced power mosfet immunity to single event effects (see), single event gate rupture (segr) in particu- lar, is combined with 100k rads of total dose hardness to provide devices which are ideally suited to harsh space envi- ronments. the dose rate and neutron tolerance necessary for military applications have not been sacri?ced. the intersil portfolio of segr resistant radiation hardened mosfets includes n-channel and p-channel devices in a variety of voltage, current and on-resistance ratings. numerous packaging options are also available. this mosfet is an enhancement-mode silicon-gate power ?eld-effect transistor of the vertical dmos (vdmos) struc- ture. it is specially designed and processed to be radiation tolerant. the mosfet is well suited for applications exposed to radiation environments such as switching regula- tion, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. this type can be operated directly from integrated circuits. also available at other radiation and screening levels. see us on the web, intersils home page: http://www.intersil.com. contact your local intersil sales of?ce for additional information. symbol package to-257aa ordering information part number package brand jansr2N7400 to-257aa jansr2N7400 caution: beryllia warning per mil-s-19500 refer to package speci?cations. g s d file number 4373.1
2-59 absolute maximum ratings t c = 25 o c, unless otherwise speci?ed jansr2N7400 units drain to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v ds 200 v drain to gate voltage (r gs = 20k w ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v dgr 200 v continuous drain current t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 8a t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i d 5a pulsed drain current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i dm 24 a gate to source voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .v gs 20 v maximum power dissipation t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p t 50 w t c = 100 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p t 20 w linear derating factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.40 w/ o c single pulsed avalanche current, l = 100 m h, (see test figure). . . . . . . . . . . . . . . . . . . . . . i as 24 a continuous source current (body diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i s 8a pulsed source current (body diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i sm 24 a operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg -55 to 150 o c lead temperature (during soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l (distance >0.063in (1.6mm) from case, 10s max) weight (typical) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 4.4 o c g caution: stresses above those listed in absolute maximum ratings may cause permanent damage to the device. this is a stress o nly rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci?cation is not im plied. electrical speci?cations t c = 25 o c, unless otherwise speci?ed parameter symbol test conditions min typ max units drain to source breakdown voltage bv dss i d = 1ma, v gs = 0v 200 - - v gate threshold voltage v gs(th) v gs = v ds , i d = 1ma t c = -55 o c - - 5.0 v t c = 25 o c 1.5 - 4.0 v t c = 125 o c 0.5 - - v zero gate voltage drain current i dss v ds = 160v, v gs = 0v t c = 25 o c--25 m a t c = 125 o c - - 250 m a gate to source leakage current i gss v gs = 20v t c = 25 o c - - 100 na t c = 125 o c - - 200 na drain to source on-state voltage v ds(on) v gs = 12v, i d = 8a - - 3.70 v drain to source on resistance r ds(on)12 i d = 5a, v gs = 12v t c = 25 o c - 0.320 0.440 w t c = 125 o c - - 0.744 w turn-on delay time t d(on) v dd = 100v, i d = 8a, r l = 12.5 w , v gs = 12v, r gs = 7.5 w - - 65 ns rise time t r - - 160 ns turn-off delay time t d(off) - - 120 ns fall time t f - - 90 ns total gate charge (not on slash sheet) q g(tot) v gs = 0v to 20v v dd = 100v, i d = 8a, - - 64 nc gate charge at 12v q g(12) v gs = 0v to 12v - 33 42 nc threshold gate charge (not on slash sheet) q g(th) v gs = 0v to 2v - - 3.1 nc gate charge source q gs - 7.8 12 nc gate charge drain q gd -1722nc thermal resistance junction to case r q jc - - 2.5 o c/w thermal resistance junction to ambient r q ja --60 o c/w jansr2N7400
2-60 source to drain diode speci?cations parameter symbol test conditions min typ max units forward voltage v sd i sd = 8a 0.6 - 1.8 v reverse recovery time t rr i sd = 8a, di sd /dt = 100a/ m s - - 340 ns electrical speci?cations up to 100k rad t c = 25 o c, unless otherwise speci?ed parameter symbol test conditions min max units drain to source breakdown volts (note 3) bv dss v gs = 0, i d = 1ma 200 - v gate to source threshold volts (note 3) v gs(th) v gs = v ds , i d = 1ma 1.5 4.0 v gate to body leakage (notes 2, 3) i gss v gs = 20v, v ds = 0v - 100 na zero gate leakage (note 3) i dss v gs = 0, v ds = 160v - 25 m a drain to source on-state volts (notes 1, 3) v ds(on) v gs = 12v, i d = 8a - 3.70 v drain to source on resistance (notes 1, 3) r ds(on)12 v gs = 12v, i d = 5a - 0.440 w notes: 1. pulse test, 300 m s max. 2. absolute value. 3. insitu gamma bias must be sampled for both v gs = 12v, v ds = 0v and v gs = 0v, v ds = 80% bv dss . single event effects (seb, segr) (note 4) test symbol environment (note 5) applied v gs bias (v) (note 6) maximum v ds bias (v) ion species typical let (mev/mg/cm) typical range ( m ) single event effects safe operating area seesoa ni 26 43 -20 200 br 37 36 -5 200 br 37 36 -10 160 br 37 36 -15 100 br 37 36 -20 40 notes: 4. testing conducted at brookhaven national labs; sponsored by naval surface warfare center (nswc), crane, in. 5. fluence = 1e5 ions/cm 2 (typical), t = 25 o c. 6. does not exhibit single event burnout (seb) or single event gate rupture (segr). typical performance curves unless otherwise speci?ed figure 1. single event effects safe operating area figure 2. drain inductance required to limit gamma dot current to i as 120 80 40 0 0 -10 -15 -20 -25 -5 v gs (v) v ds (v) let = 37mev/mg/cm 2 , range = 36 m 160 200 240 temp = 25 o c fluence = 1e5 ions/cm 2 (typical) let = 26mev/mg/cm 2 , range = 43 m 300 100 10 limiting inductance (henry) drain supply (v) 1000 ilm = 10a 300a 1e-4 1e-5 1e-6 30 100a 30a 1e-7 1e-3 jansr2N7400
2-61 figure 3. maximum continuous drain current vs temperature figure 4. forward bias safe operating area figure 5. basic gate charge waveform figure 6. normalized r ds(on) vs junction temperature figure 7. normalized maximum transient thermal response typical performance curves unless otherwise speci?ed (continued) i d , drain (a) t c , case temperature ( o c) 150 100 50 0 -50 0 10 8 6 4 2 10 1 1 0.1 i d , drain current (a) v ds , drain to source voltage (v) 10 100 50 600 operation in this area may be limited by r ds(on) 100ms 1ms 10ms 100 m s t c = 25 o c charge q gd q g v g q gs 12v 2.5 2.0 1.5 1.0 0.5 0.0 -80 -40 0 40 80 120 160 t j , junction temperature ( o c) normalized r ds(on) pulse duration = 250ms, v gs = 12v, i d = 5a normalized thermal response (z q jc ) t, rectangular pulse duration (s) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 1 0.001 0.01 0.1 10 single pulse notes: duty factor: d = t 1 /t 2 peak t j = p dm x z q jc + t c 0.01 0.02 0.05 0.1 0.5 0.2 p dm t 1 t 2 jansr2N7400
2-62 figure 8. unclamped inductive switching typical performance curves unless otherwise speci?ed (continued) 10 1 0.01 0.1 1 10 i as , avalanche current (a) 50 starting t j = 25 o c starting t j = 150 o c t av = (l) (i as ) / t av = (l/r) ln [(i as *r) / if r 1 0 if r = 0 t av , time in avalanche (ms) (1.3 rated bv dss - v dd ) (1.3 rated bv dss - v dd ) + 1] test circuits and waveforms figure 9. unclamped energy test circuit figure 10. unclamped energy waveforms figure 11. resistive switching test circuit figure 12. resistive switching waveforms t p v gs 0.01 w l i as + - v ds v dd r g dut vary t p to obtain required peak i as 0v v dd v ds bv dss t p i as t av v ds dut r gs 0v v gs = 12v v dd r l t d(on) t r 90% 10% v ds 90% 10% t f t d(off) t off 90% 50% 50% 10% pulse width v gs t on jansr2N7400
2-63 screening information screening is performed in accordance with the latest revision in effect of mil-s-19500, (screening information table). delta tests and limits (jans) t c = 25 o c, unless otherwise speci?ed parameter symbol test conditions max units gate to source leakage current i gss v gs = 20v 20 (note 7) na zero gate voltage drain current i dss v ds = 80% rated value 25 (note 7) m a drain to source on resistance r ds(on) t c = 25 o c at rated i d 20% (note 8) w gate threshold voltage v gs(th) i d = 1.0ma 20% (note 8) v notes: 7. or 100% of initial reading (whichever is greater). 8. of initial reading. screening information test jans gate stress v gs = 30v, t = 250 m s pind required pre burn-in tests (note 9) mil-s-19500 group a, subgroup 2 (all static tests at 25 o c) steady state gate bias (gate stress) mil-std-750, method 1042, condition b v gs = 80% of rated value, t a = 150 o c, time = 48 hours interim electrical tests (note 9) all delta parameters listed in the delta tests and limits table steady state reverse bias (drain stress) mil-std-750, method 1042, condition a v ds = 80% of rated value, t a = 150 o c, time = 240 hours pda 5% final electrical tests (note 9) mil-s-19500, group a, subgroups 2 and 3 note: 9. test limits are identical pre and post burn-in. additional screening tests parameter symbol test conditions max units safe operating area soa v ds = 160v, t = 10ms 0.65 a unclamped inductive switching i as v gs(peak) = 15v, l = 0.1mh 24 a thermal response d v sd t h = 10ms; v h = 25v; i h = 1a 90 mv thermal impedance d v sd t h = 500ms; v h = 25v; i h = 1a 125 mv jansr2N7400
2-64 rad hard data packages - intersil power transistors 1. jans rad hard - standard data package a. certi?cate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning attributes data sheet hi-rel lot traveler htrb - hi temp gate stress post reverse bias data and delta data htrb - hi temp drain stress post reverse bias delta data f. group a - attributes data sheet g. group b - attributes data sheet h. group c - attributes data sheet i. group d - attributes data sheet 2. jans rad hard - optional data package a. certi?cate of compliance b. serialization records c. assembly flow chart d. sem photos and report e. preconditioning - attributes data sheet - hi-rel lot traveler - htrb - hi temp gate stress post reverse bias data and delta data - htrb - hi temp drain stress post reverse bias delta data - x-ray and x-ray report f. group a - attributes data sheet - hi-rel lot traveler - subgroups a2, a3, a4, a5 and a7 data g. group b - attributes data sheet - hi-rel lot traveler - subgroups b1, b3, b4, b5 and b6 data h. group c - attributes data sheet - hi-rel lot traveler - subgroups c1, c2, c3 and c6 data i. group d - attributes data sheet - hi-rel lot traveler - pre and post radiation data jansr2N7400
2-65 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?cation. intersil products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/o r speci?cations at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnishe d by intersil is believed to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of p atents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiaries. for information regarding intersil corporation and its products, see web site http://www.intersil.com sales of?ce headquarters north america intersil corporation p. o. box 883, mail stop 53-204 melbourne, fl 32902 tel: (407) 724-7000 fax: (407) 724-7240 europe intersil sa mercure center 100, rue de la fusee 1130 brussels, belgium tel: (32) 2.724.2111 fax: (32) 2.724.22.05 asia intersil (taiwan) ltd. taiwan limited 7f-6, no. 101 fu hsing north road taipei, taiwan republic of china tel: (886) 2 2716 9310 fax: (886) 2 2715 3029 jansr2N7400 to-257aa 3 lead jedec to-257aa hermetic metal package q d l h 1 b e e 1 a 1 e a j 1 0.065 r typ. ?p l 1 ? b 1 123 symbol inches millimeters notes min max min max a 0.190 0.200 4.83 5.08 - a 1 0.035 0.045 0.89 1.14 - ?b 0.025 0.035 0.64 0.88 2, 3 ?b 1 0.060 0.090 1.53 2.28 - d 0.645 0.665 16.39 16.89 - e 0.410 0.420 10.42 10.66 - e 0.100 typ 2.54 typ 4 e 1 0.200 bsc 5.08 bsc 4 h 1 0.230 0.250 5.85 6.35 - j 1 0.110 0.130 2.80 3.30 4 l 0.600 0.650 15.24 16.51 - l 1 - 0.035 - 0.88 - ?p 0.140 0.150 3.56 3.81 - q 0.113 0.133 2.88 3.37 - notes: 1. these dimensions are within allowable dimensions of rev. b of jedec to-257aa dated 9-88. 2. add typically 0.002 inches (0.05mm) for solder coating. 3. lead dimension (without solder). 4. position of lead to be measured 0.150 inches (3.81mm) from bottom of dimension d. 5. die to base beo isolated, terminals to case ceramic isolated. 6. controlling dimension: inch. 7. revision 1 dated 1-93. warning! beryllia warning per mil-s-19500 packages containing beryllium oxide (beo) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its compounds.
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